Semiconductor Semiconductor Introduces Silicon Carbide Field Effe

瀏覽:34 作者: 來源: 時間:2018-06-26 分類:頭條5
In recent years, with the energy-saving awareness in almost all areas continue to rise in the field of high-voltage industrial equipment, energy saving and support for high-voltage power semiconductor and power IC applications are also more and more widely. Among them, compared with the existing Si power semiconductors, can support higher voltage, contribute to the realization of small and more energy-saving SiC power semiconductor high-profile.

In recent years, with the energy-saving awareness in almost all areas continue to rise in the field of high-voltage industrial equipment, energy saving and support for high-voltage power semiconductor and power IC applications are also more and more widely. Among them, compared with the existing Si power semiconductors, can support higher voltage, contribute to the realization of small and more energy-saving SiC power semiconductor high-profile.

Silicon carbide (SiC) is a kind of N-Ⅳ compound semiconductor material, with a variety of isomeric types. The typical structure can be divided into two categories: one is the sphalerite structure of the cubic SiC crystal, known as 3C or β-SiC, where 3 refers to the number of periodic order in the middle; the other is hexagonal or Diamond structure of the large cycle structure, which typically have 6H, 4H, 15R, etc., collectively referred to as α-SiC. Compared with Si, SiC material has a larger Eg, Ec, Vsat, λ. The large Eg allows SiC to work in a high temperature environment above 650 ° C and has excellent resistance to radiation.


What are the advantages of SiC power devices compared to Si devices?

As a wide bandgap semiconductor material, SiC can be said to be a shock to power semiconductors. This material not only breakdown electric field strength is high, good thermal stability, but also has a carrier saturation drift high speed, high thermal conductivity characteristics. In particular, the thermal conductivity of SiC material is more than three times that of Si material. Under the same back pressure, the breakdown strength of SiC material is 10 times higher than that of Si, and the internal resistance is only one percent of Si. SiC device operating temperature can reach 600 ℃, and the general Si devices can adhere to up to 150 ℃.

Because of these characteristics, SiC can be used to manufacture a variety of high-temperature high-frequency high-power devices, Si devices used in difficult circumstances. The SiC Schottky diode, for example, is the fastest high-voltage Schottky diode, eliminating the need for reverse recovery charging, significantly reducing switching losses, increasing switching frequency, and higher for Schottky diodes than silicon For example, 600V SiC Schottky diodes can be used in SMPS, 300V SiC Schottky diodes can be used as 48 ~ 60V fast output switching power supply rectifier diodes, and 1,200V SiC Schottky diodes with Silicon IGBT combination can be used as an ideal freewheeling diode.

MOSFETs that use silicon materials must increase the device***9;s drift area when increasing the device blocking voltage, which increases the internal resistance rapidly and increases the voltage drop and increases the loss. Blocking voltage ranges from 1,200 to 1,800 V silicon MOSFETs are not only bulky, but also expensive. Although the IGBT in the high-voltage applications can reduce conduction power consumption, but if the switching frequency increases, the switching power consumption also increases. So IGBT in the high-frequency switching power supply also has its own restrictions. The MOSFETs with SiC substrates can be easily tuned to 1,000 to 2,000 volts. The switching characteristics (junction capacitance, switching losses, switching waveforms, etc.) are similar to 100-volt silicon MOSFETs , The on-resistance can be as low as milliohms. In the high-voltage switching power supply applications, can replace the silicon IGBT and can improve the overall efficiency of the system and switching frequency.


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